tsd2150a low vcesat npn transistor 1 / 4 version: c14 sot - 89 product summary bv cbo 80v bv ceo 50v i c 3a v ce(sat) 0.5v @ i c / i b = 2a / 200ma features low v ce(sat) 0.1 @ i c / i b = 1a / 50ma (typ.) complementary part with tsb1424a ordering information part n o. package packing tsd2150acy rm sot - 89 1kpcs / 7 reel structure epitaxial planar type npn silicon transistor absolute maximum rating s ( ta = 25 o c unless otherwise noted ) parameter symbol limit unit collector - base voltage v cbo 80 v collector - emitte r voltage v ceo 50 v emitter - base voltage v ebo 6 v collector current dc i c 3 a pulse 6 (note1) collector power dissipation p d 0. 6 w operating junction temperature t j +150 o c operating junction and storage temperature range t stg - 55 to +150 o c not e: 1. single pulse, pw=10ms, duty 50% 2. when mounted on a 40 x 50 x 0.7mm ceramic board. electrical specifications ( t a = 25 o c unless otherwise noted ) parameter conditions symbol min typ max u nit collector - base breakdown voltage i c = 50ua, i e = 0 bv cbo 80 -- -- v collector - emitt er breakdown voltage i c = 1 ma, i b = 0 bv ceo 50 -- -- v emitter - base breakdown voltage i e = 50ua, i c = 0 bv ebo 6 -- -- v collector cutoff current v cb = 6 0v, i e = 0 i cbo -- -- 0.1 a emitter cutoff current v eb = 3v, i c = 0 i ebo -- -- 0.1 a coll e ctor - emi tter saturation voltage i c / i b = 1 a / 50m a v ce(sat) -- 0. 1 0.2 5 v i c / i b = 2 a / 200m a v ce(sat) -- 0.25 0.5 base - emitter saturation voltage i c / i b = 2 a / 200m a v b e(sat) -- -- 2 v dc current transfer ratio v ce = 2 v, i c = 100 ma h fe 1 180 -- -- v ce = 2 v, i c = 500 ma h fe 2 200 -- 400 v ce = 2 v, i c = 1 a h fe 3 150 -- -- transition frequency v ce = 5v, i e =0.1 a, f=100mhz f t -- 90 -- mhz output capacitance v cb = 10v , f=1mhz cob -- 45 -- pf note: pulse test: pulse width 380 s , duty cycle 2% pin definition : 1. base 2. collector 3. emitter
tsd2150a low vcesat npn transistor 2 / 4 version: c14 electrical c haracteristics curv es ( t a = 25 o c , unless otherwise noted ) figure 1. dc current gain figure 2. v ce(sat ) v.s. collector current figure 3. v be(sat ) v.s. collector current figure 4. power derating curve
tsd2150a low vcesat npn transistor 3 / 4 version: c14 sot - 89 mechanical drawing unit: milli meters
tsd2150a low vcesat npn transistor 4 / 4 version: c14 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inac curacies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tsc s terms and conditions of sale for such pr oducts, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purp ose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products fo r use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale.
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